Document | DataSheet (151.64KB) |
The Samsung KMM366S1623CT is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung KMM366S1623CT consists of sixteen CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.1uF d.
ance range Part No. Max Freq. (Speed) KMM366S1623CT-G8 125MHz (8ns @ CL=3) KMM366S1623CT-GH 100MHz (10ns @ CL=2) KMM366S1623CT-GL 100MHz (10ns @ CL=3) Burst mode operation Auto & self refresh capability (4096 Cycles/64ms) LVTTL compatible inputs and outputs Single 3.3V ± 0.3V power supply MRS cycle with address key programs Latency (Access from column address) Burst length (1, 2, 4, 8 & Full page) Data scramble (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Serial presence detect with EEPROM PCB : Height (1,375mil), double sided component
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Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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1 | KMM366S1623CTY |
Samsung |
PC100 SDRAM Module | |
2 | KMM366S1623AT |
Samsung |
16M x 64 SDRAM DIMM | |
3 | KMM366S1623BT |
Samsung |
PC100 SDRAM MODULE | |
4 | KMM366S1623BTL |
Samsung |
PC66 SDRAM Module | |
5 | KMM366S1623DTL |
Samsung |
PC66 Unbuffered DIMM | |
6 | KMM366S163BT |
Samsung |
PC100 SDRAM MODULE | |
7 | KMM366S403CTL |
Samsung |
PC66 SDRAM MODULE | |
8 | KMM366S823AT |
Samsung Semiconductor |
SDRAM DIMM | |
9 | KMM366S823CT |
Samsung Semiconductor |
PC100 Unbuffered DIMM | |
10 | KMM366S823CTF |
Samsung Semiconductor |
Unbuffered DIMM | |
11 | KMM366S823CTL |
Samsung Semiconductor |
Unbuffered DIMM | |
12 | KMM366S823CTS |
Samsung Semiconductor |
Unbuffered DIMM | |
13 | KMM366S823CTY |
Samsung Semiconductor |
Unbuffered DIMM | |
14 | KMM366S823DTF |
Samsung Semiconductor |
Unbuffered DIMM | |
15 | KMM366S823DTS |
Samsung Semiconductor |
Unbuffered DIMM |