STP6NA60FP |
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| Part Number | STP6NA60FP |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This series of POWER MOSFETS represents the most advanced high voltage technology. The optmized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and ga... |
| Features |
oltage (R GS = 20 k Ω) Gate-source Voltage Drain Current (continuous) at T c = 25 o C o Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 o C Derating Factor Insulation W ithstand Voltage (DC) St orage Temperature Max. Operating Junction Temperature Valu e 600 600 ± 30 3.9 2.6 26 40 0.32 2000 -65 to 150 150 Unit V V V A A A W o W/ C V o C o C
( •) Pulse width limited by safe operating area October 1997 1/5 STP6NA60FP THERMAL DATA R t hj-ca se R t hj- amb R thc- si nk Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max T... |
| Datasheet |
 STP6NA60FP Data Sheet
PDF 50.53KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
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ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
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STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
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STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
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STMicroelectronics |
N-channel MOSFET |
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ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
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ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
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STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
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STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
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ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
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STMicroelectronics |
N-channel Power MOSFET |
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STMicroelectronics |
N-channel Power MOSFET |
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