SIR341ST3F Datasheet

SIR341ST3F Infrared Light Emitting Diode / Top View Type

SIR-341ST3F Sensors Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a.

Features

1) Compact (φ3.1mm). 2) High efficiency, high output PO=8.4mW (IF=50mA). 3) Wide radiation angle θ 1/2=±16deg. 4) Peak wavelength well suited to silicon detectors (λP=940nm). 5) Good current-optical output linearity. 6) Long life, high reliability. 2− 0.5 Min.24 1 (2.5) 2.5±1 2 Max.1 4−0.6 5.2±0.3 1.1 1 Anode 2 Cathode !Absolute maximum ratings (Ta = 25°C) Parameter Forward current Reverse voltage Power dissipation Pulse forward current Operating temperature Storage temperature ∗ Pulse width=0.1msec, duty ratio 1% Symbol IF VR PD IFP∗ Topr Tstg Limits 75 5 100 1.0 −25~+85 −40~+85.