A1013 Datasheet

A1013 Silicon PNP Epitaxial Transistor

:The A1013 is designed for color TV class B sound output applications Features: ●High voltage: VCEO=160V ●Complementary to C2383 Chip Appearance Chip Size Chip Thickness Bonding Pad Size Front Metal Backside Metal Scribe line width Wafer Size Base 1100um×1100um 210±20um 240um×240um Emitter 330um×26.

Features

●High voltage: VCEO=160V
●Complementary to C2383 Chip Appearance Chip Size Chip Thickness Bonding Pad Size Front Metal Backside Metal Scribe line width Wafer Size Base 1100um×1100um 210±20um 240um×240um Emitter 330um×260um Al Au 60um 6 inch Electrical Characteristics( Ta=25℃) Characteristic Collector Cutoff Current Emitter Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector Saturation Voltage Symbol ICBO IEBO BVCBO BVCEO BVEBO hFE VCE(sat) Test Condition VCB=-150V, IE=0 VEB=-6V, IC=0 IC=-0.1mA IC=-10mA .