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Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPP07N60S5 SPI07N60S5 VDS RDS(on) ID 600 V 0.6 .
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INCHANGE |
N-Channel MOSFET |
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Infineon Technologies |
Power Transistor |
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INCHANGE |
N-Channel MOSFET |
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Infineon Technologies |
Cool MOS Power Transistor |
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INCHANGE |
N-Channel MOSFET |
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Infineon Technologies |
Cool MOS Power Transistor |
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INCHANGE |
N-Channel MOSFET |
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INCHANGE |
N-Channel MOSFET |
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Infineon Technologies |
Power Transistor |
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ISU |
SMD High Current Power Induvtor |
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ISU |
SMD High Current Power Induvtor |
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ISU |
SMD High Current Power Induvtor |
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ISU |
SMD High Current Power Induvtor |
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Sanyo Semicon Device |
Ultraminiature photointerrupter (single-transistor type) |
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Sanyo Semicon Device |
Ultraminiature photointerrupter (single-transistor type) |
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