BC238 Datasheet

BC238 NPN EPITAXIAL SILICON TRANSISTOR

BC237/238/239 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • LOW NOISE: BC239 TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25° C) Characteristic Collector-Emitter Voltage : BC237 : BC238/239 Collector-Emitter Voltage : BC237 : BC238/239 Emitter-Base Voltage : BC237 : BC238/239 Coll.

Features

.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA VCE=5V, IC=2mA VCE=3V, IC=0.5mA VCE=5V, IC=10mA Collector Base Capacitance Emitter Base Capacitance Noise Figure : BC237/238 : BC239 : BC239 CCBO CEBO NF NF VCB=10V, f=1MHz VEB=0.5V, f=1MHz VCE=5V, IC=0.2mA, f=1KHz RG=2kohm VCE=5V, IC=0.2mA RG=2kohm, f=30~15KHz 0.2 0.2 120 0.07 0.2 0.73 0.87 0.62 85 250 3.5 8 2 6 10 4 4 15 15 800 0.2 0.6 0.83 1.05 0.7 nA nA V V V V V MHz MHz pF pF dB dB dB V V V V Min Typ Max Unit BVEBO hFE VCE (sat) VBE (sat) VBE (on) fT 0.55 150 hFE CLASSIFICATION Classification hFE A 120-220 B 180-460 C 380-800 .