BC182 BC182 NPN General Purpose Amplifier • This device is designed for general purpose amplifier application at collector currents to 100mA. • Sourced from process 10. 1 TO-92 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, T.
ts V V V Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage V(BR)CBO V(BR)EBO ICBO IEBO Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter-Base Leakage Current 15 15 40 120 80 nA nA On Characteristics hFE DC Current Gain 500 0.25 0.6 1.2 V V V MHz 5 pF dB 500 10 VCE(sat) VBE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage 0.55 150 125 0.7 Dynamic Characteristics fT Current Gain Bandwidth Product Cob hfe NF Output Capacitance Small Signal Current Gain Noise Figure ©2.
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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1 | BC1806IR-390-N |
Chilisin Electronics |
Leaded Power Chokes | |
2 | BC182 |
SEMTECH |
NPN Silicon Epitaxial Planar Transistor | |
3 | BC182 |
Motorola |
Amplifier Transistors | |
4 | BC182 |
ON |
Amplifier Transistor | |
5 | BC182 |
CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS | |
6 | BC182A |
CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS | |
7 | BC182A |
Motorola |
Amplifier Transistors | |
8 | BC182B |
CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS | |
9 | BC182B |
Motorola |
Amplifier Transistors | |
10 | BC182B |
ON |
Amplifier Transistor | |
11 | BC182B |
Fairchild |
NPN General Purpose Amplifier | |
12 | BC182L |
Micro Electronics |
COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTOR | |
13 | BC182L |
Fairchild |
NPN General Purpose Amplifier | |
14 | BC183 |
SEMTECH |
NPN Silicon Epitaxial Planar Transistor | |
15 | BC183 |
CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |