BBY65 Silicon Tuning Diode

BBY65 Silicon Tuning Diode

Silicon Tuning Diode • High Q hyperabrupt tuning diode • Very low capacitance spread • Designed for low tuning voltage operation for VCO's in mobile communications equipment • For low frequency control elements such as TCXOS and VCXOS • High capacitance ratio and good C-V linearity • Pb-free (RoHS c.

Features

V, f = 1 MHz CT 28.2 29.5 30.8 - 20.25 - 9.8 - 4.45 2.6 2.7 2.8 Capacitance ratio VR = 0.3 V, VR = 4.7 V Capacitance ratio VR = 1 V, VR = 3 V Series resistance VR = 1 V, f = 470 MHz CT0.3/ CT4.7 CT1/CT3 rS 10 10.9 - 4.55 - 0.6 0.9 Unit nA pF pF pF Ω 2 2011-06-15 CT Diode capacitance CT = ƒ (VR) f = 1MHz 40 pf 30 25 20 15 10 5 00 1 2 3 V 5 VR BBY65... 3 2011-06-15 Package SC79 BBY65... 4 2011-06-15 BBY65... Date Code marking for discrete packages with one digit (SCD80, SC79, SC751)) CES-Code Month 2 0 03 2 0 04 2 0 0 5 2 0 0 6 2 0 07 2 0 0 8 2009 2 0 1 0 2 0 1 1 2 0 1 2 2 0 13 2 .