BB601M |
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| Part Number | BB601M |
| Manufacturer | Hitachi |
| Description | BB601M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-702C (Z) 4th. Edition Nov. 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG =... |
| Features |
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4R(SOT-143mod) Outline MPAK-4R 3 4 2 1 1. Source 2. Drain 3. Gate2 4. Gate1 Notes: 1. Marking is “AT –”. 2. BB601M is individual type number of HITACHI BBFET. BB601M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current... |
| Document |
 BB601M Data Sheet
PDF 67.13KB |
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