BB301 Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB301 Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB301C Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-507 1st. Edition Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode . Withstand up to.

Features

• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz)
• Withstanding to ESD; Build in ESD absorbing diode . Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Outline CMPAK
  –4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain BB301C Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 +6
  –0 ±6 25 100 150
  –55 to +150 Unit V V.