IXFH22N55 |
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| Part Number | IXFH22N55 |
| Manufacturer | IXYS |
| Description | HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) f... |
| Features |
• International standard packages JEDEC TO-247 AD • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance (< 5 nH) - easy to drive and to protect • Fast intrinsic Rectifier Applications 1.13/10 Nm/lb.in. 6 g Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 550 2 4.5 ±100 TJ = 25°C TJ = 125°C 250 1 0.27 V V nA mA mA W VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8 • VDSS VGS = 0 V • • • • Powe... |
| Datasheet |
 IXFH22N55 Data Sheet
PDF 69.29KB |
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