NDP7052L |
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| Part Number | NDP7052L |
| Manufacturer | Fairchild |
| Description | These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been espe... |
| Features |
75 A, 50 V. RDS(ON) = 0.010 Ω @ VGS= 5 V RDS(ON) = 0.0075 Ω @ VGS= 10 V. Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
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Absolute Maximum Ratings
Symbol VDSS VDGR VGSS ID Paramet... |
| Document |
 NDP7052L Data Sheet
PDF 54.84KB |
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N-Channel Enhancement Mode Field Effect Transistor |
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N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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N-Channel Enhancement Mode Field Effect Transistor |
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N-Channel Enhancement Mode Field Effect Transistor |
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