Search by part number and manufacturer or description
NDP510B |
|
Click to view a larger image
| Part Number | NDP510B |
| Manufacturer | Fairchild |
| Description | These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailo... |
| Features |
15 and 13A, 100V. RDS(ON) = 0.12 and 0.15Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
_____________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter VDSS VDGR VGSS ID PD Drain-Source Voltage Drain-Gate Volta... |
| Document |
 NDP510B Data Sheet
PDF 72.50KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
|
|
|
Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
|
|
|
|
Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
|
|
|
|
Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
|
|
|
|
National Semiconductor |
(NDP505 / NDP5060 N-Channel Enhancement Mode Power FET |
|
|
|
|
National Semiconductor |
(NDP505 / NDP5060 N-Channel Enhancement Mode Power FET |
|
|
|
|
Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
|
|
|
|
Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
|
|
|
National Semiconductor |
(NDP505 / NDP5060 N-Channel Enhancement Mode Power FET |
|
|
|
|
National Semiconductor |
(NDP505 / NDP5060 N-Channel Enhancement Mode Power FET |
|
|
|
|
Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
|