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NDB410BE |
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| Part Number | NDB410BE |
| Manufacturer | Fairchild |
| Description | These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailo... |
| Features |
9 and 8A, 100V. RDS(ON) = 0.25 and 0.30Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
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D
G
S
Absolute Maximum Ratings
Symbol Parameter VDSS VDGR VGSS ID PD Drain-Source Voltage Drain-Gate Voltage... |
| Document |
 NDB410BE Data Sheet
PDF 74.01KB |
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| No. | Part # | Manufacture | Description | Datasheet |
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Fairchild |
N-Channel MOSFET |
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Fairchild |
N-Channel MOSFET |
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N-Channel MOSFET |
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N-Channel MOSFET |
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Fairchild |
N-Channel MOSFET |
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Fairchild |
N-Channel MOSFET |
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Fairchild |
N-Channel MOSFET |
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Fairchild |
N-Channel MOSFET |
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