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MGF1801BT

Mitsubishi
Part Number MGF1801BT
Manufacturer Mitsubishi
Title High-power GaAs FET
Description The MGF1801BT, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X ...
Features  High linear power gain Glp=9.0dB @f=8GHz  High P1dB P1dB=23dBm(TYP.) @f=8GHz  High reliability and stability APPLIC...
Published Apr 29, 2005
Datasheet PDF File MGF1801BT PDF File


MGF1801BT
MGF1801BT


Features

 High linear power gain Glp=9.0dB @f=8GHz
 High P1dB P1dB=23dBm(TYP.) @f=8GHz
 High reliability and stability APPLICATION
 S to X Band medium-power amplifiers and oscillators QUALITY
 IG RECOMMENDED BIAS CONDITION
 VDS=6V,Id=100mA Absolute ...



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