MG150Q2YS40 N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)

MG150Q2YS40 N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)

TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS40 MG150Q2YS40 High Power Switching applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs (max) trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max) l Enhancement-mode l Includes a compl.

Features

ff current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance Symbol IGES ICES VGE (off) VCE (sat) Cies tr ton tf toff VF trr Rth (j-c) Test Condition VGE = ±20V, VCE = 0 VCE = 1200V, VGE = 0 IC = 150mA , VCE = 5V IC = 150A, VGE = 15V VCE = 10V, VGE = 0, f = 1MHz IF = 150A, VGE = 0 IF = 150A, VGE = −10V di / dt = 200A / µs Transistor Diode MG150Q2YS40 Min Typ. Max Unit ― ― ±20 ― ― 2.0 3.0 ― 6.0 ― 3.0 4.0 ― 18000 ― ― 0.3 0.6 ― 0.4.