Document | DataSheet (119.81KB) |
Two P-channel enhancement mode MOS transistors in an 8-pin plastic SOT96-1 (SO8) package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. 1 4 s1 g 1 d1 d1 5 PHP225 PINNING - SOT96-1 (SO8) PIN 1 2.
• High-speed switching
• No secondary breakdown
• Very low on-resistance. APPLICATIONS
• Motor and actuator driver
• Power management
• Synchronized rectification. DESCRIPTION Two P-channel enhancement mode MOS transistors in an 8-pin plastic SOT96-1 (SO8) package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.
1 4 s1 g 1 d1 d1 5
PHP225
PINNING - SOT96-1 (SO8) PIN 1 2 3 4 5 6 7 8 SYMBOL s1 g1 s2 g2 d2 d2 d1 d1 DESCRIPTION source 1 gate 1 source 2 gate 2 drain 2 drain 2 drain 1 drain 1
han.
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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1 | PHP222 |
NXP |
Dual P-channel enhancement mode MOS transistor | |
2 | PHP222NQ04LT |
NXP Semiconductors |
N-channel TrenchMOSTM logic level FET | |
3 | PHP225NQ04T |
NXP Semiconductors |
N-channel TrenchMOS standard level FET | |
4 | PHP206 |
NXP |
Dual P-channel enhancement mode MOS transistor | |
5 | PHP208 |
Semtech Corporation |
7/500 & 15/000 Watt TVS Module | |
6 | PHP20N06 |
NXP |
N-channel TrenchMOS transistor | |
7 | PHP20N06 |
NXP |
PowerMOS transistor | |
8 | PHP20N06E |
NXP |
PowerMOS transistor | |
9 | PHP20N06T |
NXP |
N-channel TrenchMOS transistor | |
10 | PHP20N06T |
nexperia |
N-channel MOSFET | |
11 | PHP20NQ20T |
NXP |
N-channel TrenchMOS standard level FET | |
12 | PHP212 |
NXP |
Dual P-channel enhancement mode MOS transistor | |
13 | PHP212L |
NXP |
Dual P-channel enhancement mode MOS transistor | |
14 | PHP21N06 |
NXP |
TrenchMOSO transistor Standard level FET | |
15 | PHP21N06 |
NXP |
N-channel TrenchMOS transistor Logic level FET |