PHP18NQ10T Datasheet

PHP18NQ10T N-channel TrenchMOS transistor

N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:• d.c. to d.c. converters • switched mode power supplies The PHP18NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB18NQ10T is supplied in the SOT404 (D2P.

Features

• ’Trench’ technology
• Low on-state resistance
• Fast switching
• Low thermal resistance SYMBOL VDSS = 100 V ID = 18 A g RDS(ON) ≤ 90 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:
• d.c. to d.c. converters
• switched mode power supplies The PHP18NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB18NQ10T is supplied in the SOT404 (D2PAK) surface mounting package. The PHD18NQ10T is supplied in the SOT428 (DPAK) surface mounting package. PINNING PIN 1 2 3 tab DESCRIPTI.