PHB23NQ15T NXP N-channel TrenchMOS transistor

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PHB23NQ15T

NXP
PHB23NQ15T
PHB23NQ15T PHB23NQ15T
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Part Number PHB23NQ15T
Manufacturer NXP (https://www.nxp.com/)
Description N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and...
Features
• ’Trench’ technology
• Low on-state resistance
• Fast switching
• Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 150 V ID = 23 A g RDS(ON) ≤ 90 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP23NQ15T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB23NQ15T is supplied in the SOT404 (D2PAK) surface mounting package. PINNING PIN 1 2 3...

Datasheet Datasheet PHB23NQ15T Data Sheet
PDF 99.05KB


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