N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Logic level compatible s High density mounting s Low gate charge s Very low on-state resistance. 1.3 Applications s DC-to-DC converters s Notebook computers s Switched-mode powe.
s Logic level compatible s High density mounting s Low gate charge s Very low on-state resistance. 1.3 Applications s DC-to-DC converters s Notebook computers s Switched-mode power supplies s Computer motherboards. 1.4 Quick reference data s VDS ≤ 30 V s Ptot ≤ 62.5 W s ID ≤ 100 A s RDSon ≤ 3.2 mΩ. 2. Pinning information Table 1: Pin 1,2,3 4 mb Pinning - SOT669 (LFPAK), simplified outline and symbol Description source (s) gate (g) drain (d) g s mb d Simplified outline Symbol MBB076 1 2 3 4 MBL286 Top view SOT669 (LFPAK) Philips Semiconductors PH3230S N-channel TrenchMOS™ logic leve.
Similar Product
No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | PH3230 |
NXP |
N-channel enhancement mode field-effect transistor | |
2 | PH320 |
NEC |
Pin Photodiode | |
3 | PH320240-A |
Powertip Technology |
POWERTIP | |
4 | ph320240a |
POWERTIP |
LCD_Module | |
5 | ph320240b |
POWERTIP |
LCD_Module |