PH3134-30S Datasheet

PH3134-30S Radar Pulsed Power Transistor/ 3OW/ lms Pulse/ 10% Duty 3.1 - 3.4 GHz

--= --=z an AMP company = Radar Pulsed Power Transistor, 3OW, lps Pulse, 10% Duty PH3134-30s 3.1 - 3.4 GHz v2.00 Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasti.

Features

l l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package I .iOO (2.54) A A I 430 :!0.16) Absolute Maximum Ratings at 25°C Parameter 1 Collector-Emitter Emitter-Base Voltage il .I00 (2.54) I Symbol I 1 V,,, V sac L ( P,,, TJ T ST0 1 I Rating 66 3.0 3.6 350 200 -65 to +200 ( Units 1 A 103 (2.54) -: ?- I v I V A Voltage Collector Current (Peak) Total Power .