P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 450 Volt VDS * RDS(on)=150Ω ZVP0545A D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating a.
* 450 Volt VDS * RDS(on)=150Ω ZVP0545A D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg E-Line TO92 Compatible VALUE -450 -45 -400 ± 20 UNIT V mA mA V mW °C 700 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Stat.
Similar Product
No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | ZVP0545G |
Zetex Semiconductors |
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
2 | ZVP0545G |
DIODES |
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
3 | ZVP0540A |
Zetex Semiconductors |
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
4 | ZVP0535A |
Zetex Semiconductors |
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
5 | ZVP0120A |
Zetex Semiconductors |
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |