ZTX656 Datasheet

ZTX656 NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS

NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ISSUE 2 – JULY 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt ZTX656 ZTX657 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuo.

Features

* 300 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt ZTX656 ZTX657 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg ZTX656 200 200 5 1 0.5 1 E-Line TO92 Compatible ZTX657 300 300 UNIT V V V A A W °C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emit.