W27E040 512K x 8 ELECTRICALLY ERASABLE EPROM

W27E040 512K x 8 ELECTRICALLY ERASABLE EPROM

The W27E040 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 524288 × 8 bits that operates on a single 5 volt power supply. The W27E040 provides an electrical chip erase function. FEATURES • High speed access time: 90/120 nS (max.) • Read operating cur.

Features

• High speed access time: 90/120 nS (max.)
• Read operating current: 15 mA (typ.)
• Erase/Programming operating current 15 mA (typ.)
• Standby current: 5 µA (typ.)
• Single 5V power supply
• +14V erase/+12V programming voltage
• Fully static operation
• All inputs and outputs directly TTL/CMOS compatible
• Three-state outputs
• Available packages: 32-pin 600 mil DIP, 450 mil SOP, PLCC and TSOP PIN CONFIGURATIONS BLOCK DIAGRAM A11 A9 A8 A13 A14 A17 A18 VCC VPP A16 A15 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 V PP A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 Q0 Q1 Q2 GND 1 2 3 4 5 6 .