UPA861TD Datasheet

UPA861TD NECs NPN SILICON RF TWIN TRANSISTOR

PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Base (Q2) 5. Emitter (Q2) 6. Base (Q1) 0.5±0.05 UPA861TD ABSOLUTE MAXIMUM RATINGS1,2 (TA = 25°C) SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Co.

Features

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• LOW VOLTAGE, LOW CURRENT OPERATION LOW CAPACITANCE FOR WIDE TUNING RANGE SMALL PACKAGE OUTLINE: 1.2 mm x 0.8 mm LOW HEIGHT PROFILE: Just 0.50 mm high 0.4 1 UPA861TD OUTLINE DIMENSIONS (Units in mm) Package Outline TD (TOP VIEW) 1.0±0.05 0.8 +0.07 -0.05 (Top View) 0.15±0.05 6 C1 1 Q1 6 B1 vX 3 4 TWO DIFFERENT DIE TYPES: Q1 - Ideal buffer amplifier transistor Q2 - Ideal oscillator transistor IDEAL FOR >3 GHz OSCILLATORS +0.07 -0.05 2 0.8 5 1.2 E1 0.4 2 Q2 5 E2
• C2 3 4 B2 NEC's UPA861TD contains one NE894 and one NE687 NPN high frequency silicon bipolar c.