UPA1709 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

UPA1709 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management switch. FEATURES • Low on-resistance RDS(on)1 = 9.3 mΩ (TYP.) (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 13.8 mΩ (TYP.) (VGS = 4.5 V, ID = 4.5 A) • Low Ciss : Ciss = 1850 pF (TYP.) • Built-in G-S prote.

Features

• Low on-resistance RDS(on)1 = 9.3 mΩ (TYP.) (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 13.8 mΩ (TYP.) (VGS = 4.5 V, ID = 4.5 A)
• Low Ciss : Ciss = 1850 pF (TYP.)
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8) PACKAGE DRAWING (Unit : mm) 8 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain 1 4 5.37 Max. +0.10
  –0.05 6.0 ±0.3 4.4 0.8 1.8 Max. ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 1.44 0.15 0.05 Min. µ PA1709G 0.5 ±0.2 0.10 1.27 0.40 0.78 Max. +0.10
  –0.05 0.12 M ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltag.