BUJ101A NXP Silicon Diffused Power Transistor

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BUJ101A

NXP
BUJ101A
BUJ101A BUJ101A
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Part Number BUJ101A
Manufacturer NXP (https://www.nxp.com/)
Description High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switch...
Features m Rating System (IEC 134) SYMBOL VCESM VCEO VCBO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector to emitter voltage Collector to emitter voltage (open base) Collector to base voltage (open emitter) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 700 400 700 0.5 1 0.2 0.3 42 150 150 UNIT V V V A A A A W ˚C ˚C Tmb ≤ 25 ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient in free air CONDITIONS TYP. 100...

Datasheet Datasheet BUJ101A Data Sheet
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