BU508DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

BU508DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

The BU208D, BU508D and BU508DFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. 3 2 3 2 TO-218 1 ISOWATT218 1 INTERNAL SCHEMATIC DIAGRAM For TO-3 : C = Tab E = Pin2. ABSOLUTE MAXIMUM RA.

Features

Value 1500 700 10 8 15 T O - 218 125 150 ISOW ATT 218 50 -65 to 150 150 150 175 Unit V V V A A W o o -65 to 175 -65 to 150 C C 1/8 BU208D / BU508D / BU508DFI THERMAL DATA T O-3 R t hj-ca se Thermal Resistance Junction-case Max 1 TO-218 1 ISO WATT218 2.5 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO V CEO(sus) V CE(sat )∗ V BE(s at)∗ Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage INDUCTIVE LOAD Storag.