BU508AW NXP Silicon Diffused Power Transistor

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BU508AW

NXP
BU508AW
BU508AW BU508AW
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Part Number BU508AW
Manufacturer NXP (https://www.nxp.com/)
Description High voltage, high-speed switching npn transistors in a plastic envelope, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC...
Features ollector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 700 8 15 4 6 125 150 150 UNIT V V A A A A W ˚C ˚C Tmb ≤ 25 ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS in free air TYP. 45 MAX. 1.0 UNIT K/W K/W July 1998 1 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU...

Datasheet Datasheet BU508AW Data Sheet
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