BU4525DX Silicon Diffused Power Transistor

BU4525DX Silicon Diffused Power Transistor

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope with an integrated damper diode intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and.

Features

exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP. 9.0 t.b.f 0.4 t.b.f MAX. 1500 800 12 30 45 3.0 2.2 0.55 t.b.f UNIT V V A A W V A A V µs µs Ths ≤ 25 ˚C IC = 9.0 A; IB = 2.