BU4515DX Silicon Diffused Power Transistor

BU4515DX Silicon Diffused Power Transistor

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Features exceptional tolerance to base drive and .

Features

exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP. 6.0 t.b.f 1.7 t.b.f t.b.f MAX. 1500 800 9 20 45 3.0 2.0 t.b.f t.b.f UNIT V V A A W V A A V µs µs Ths ≤ 25 ˚C IC = 5.0 A; .