BU2722DF Silicon Diffused Power Transistor

BU2722DF Silicon Diffused Power Transistor

New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of high resolution monitors. Suitable for operation up to 64 kHz, designed to withstand VCES pulses up to 1700 V. QUICK .

Features

LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1700 825 10 25 10 20 150 20 45 150 150 UNIT V V A A A A mA A W ˚C ˚C average over any 20 ms period Ths ≤ 25 ˚C .