IL66 |
|
Part Number | IL66 |
Manufacturer | Siemens Semiconductor Group |
Description | IL66, ILD66, and ILQ66 are optically coupled isolators employing Gallium Arsenide infrared emitters and silicon photodarlington detectors. Switching can be accomplished while maintaining a high degree... |
Features |
• Internal RBE for High Stability • Current Transfer Ratio is Tested at 2.0 mA and 0.7 mA Input IL/ILD/ILQ66 Series: - 1, 100% min. at IF=2 mA, VCE=10 V - 2, 300% min. at IF=2 mA, VCE=10 V - 3, 400% min. at IF=0.7 mA, VCE=10 V - 4, 500% min. at IF=2 mA, VCE=5 V • Four Available CTR Categories per Package Type • BVCEO>60 V • Standard DIP Packages • Underwriters Lab File #E52744 • V VDE 0884 Available with Option 1 D E Dimensions in inches (mm) 3 .248 (6.30) .256 (6.50) 4 5 6 2 1 Pin One I.D. Anode 1 Cathode 2 NC 3 .300 (7.62) Typ. .130 (3.30) .150 (3.81) 18° Typ. .010 (.25) .014 (.35) .300 (7... |
Datasheet |
IL66 Data Sheet
PDF 74.21KB |
Distributor | Stock | Price | Buy |
---|
No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
|
|
Integral |
PULSE WIDTH MODULATION MICROCIRCUIT OF POWER MOS TRANSISTOR |
|
|
|
IK Semiconductor |
PWM Power Control IC |
|
|
|
Integral |
PULSE WIDTH MODULATION MICROCIRCUIT OF POWER MOS TRANSISTOR |
|
|
|
Integral |
PULSE WIDTH MODULATION MICROCIRCUIT OF POWER MOS TRANSISTOR |
|
|
|
Integral |
PULSE WIDTH MODULATION MICROCIRCUIT OF POWER MOS TRANSISTOR |
|
|
|
NVE |
(IL610 - IL614) Passive Input Digital Isolators |
|
|
|
NVE |
(IL610 - IL614) Passive Input Digital Isolators |
|
|
|
NVE |
(IL610 - IL614) Passive Input Digital Isolators |
|
|
|
NVE |
(IL610 - IL614) Passive Input Digital Isolators |
|
|
|
NVE |
(IL610 - IL614) Passive Input Digital Isolators |
|