Q62702-C629 PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage)

Q62702-C629 PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage)

PNP Silicon AF Transistors BCX 78 BCX 79 q q q q q High current gain Low collector-emitter saturation voltage Low noise at 1 kHz Low noise at low frequencies Complementary types: BCX 58, BCX 59 (NPN) 1 2 3 Type BCX 78 BCX 78-VII BCX 78-VIII BCX 78-IX BCX 78-X BCX 79 BCX 79-VII BCX 79-VIII BCX 7.

Features

Unit V mA Total power dissipation, TC = 70 ˚C Ptot mW ˚C 250 160 K/W 1) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 2 BCX 78 BCX 79 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 2 mA BCX 78 BCX 79 Collector-base breakdown voltage IC = 10 µA BCX 78 BCX 79 Emitter-base breakdown voltage IE = 1 µA Collector cutoff current VCB = 32 V VCB = 45 V VCB = 32 V, TA = 150 ˚C VCB = 45 V, TA = 150 ˚C BCX 78 BCX 79 BCX 78 BCX 79 ICE0
  –
  – IEB0 hFE BCX 79 VII BCX 79 VI.