Q62702-C2537 Datasheet

Q62702-C2537 NPN/PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain)

BC 846PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated NPN/PNP Transistors in one package 4 5 6 2 Tape loading orientation 3 VPS05604 1 PIN Configuration Type BC.

Features

1-01 BC 846PN Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics per Transistor Collector-emitter breakdown voltage typ. max. 15 5 Unit V(BR)CEO V(BR)CBO V(BR)CES V(BR)EBO ICBO ICBO hFE 65 80 80 5 - V I C = 10 mA, I B = 0 Collector-base breakdown voltage I C = 10 µA, IB = 0 Collector-emitter breakdown voltage V I C = 10 µA, VBE = 0 Emitter-base breakdown voltage I E = 10 µA, I C = 0 Collector cutoff current VCB = 30 V, I E = 0 Collector cutoff current nA µA - VCB = 30 V, I E = 0 , TA = 150 °C DC current gain 1) I C = 10.