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Q62702-C2329
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Q62702-C2329 PNP Silicon AF Transistor (For general AF applications High collector current High current gain)

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Q62702-C2329 PNP Silicon AF Transistor (For general AF applications High collector current High current gain)

BC 807-16W PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC817W, BC818W (NPN) Type BC 807-16W BC 807-25W BC 807-40W BC 808-16W BC 808-25W BC 808-40W Marking Ordering Code 5As 5B.

Features

C K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group Dec-19-1996 BC 807-16W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 45 25 160 250 350 100 50 100 V IC = 10 mA, IB = 0 , BC 807 W IC = 10 mA, IB = 0 , BC 808 W Collector-base breakdown voltage V(BR)CBO 50 30 IC = 10 µA, IB = 0 , BC 807 W IC = 10 µA, IB = 0 , BC 808 W Base-emitter breakdown voltage V(BR)EBO 5 IE = 10 µA, IC = 0 Collector-base cuto.

Q62702-C2329 Q62702-C2329 Q62702-C2329
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