Q62702-C2113 PNP Silicon AF Transistors (For AF driver and output stages High collector current)

Q62702-C2113 PNP Silicon AF Transistors (For AF driver and output stages High collector current)

PNP Silicon AF Transistors BCP 51 ... BCP 53 For AF driver and output stages q High collector current q Low collector-emitter saturation voltage q Complementary types: BCP 54 … BCP 56 (NPN) q Type BCP 51 BCP 51-10 BCP 51-16 BCP 52 BCP 52-10 BCP 52-16 BCP 53 BCP 53-10 BCP 53-16 Marking BCP 51 BCP.

Features

oldering point Rth JA Rth JS ≤ ≤ Symbol BCP 51 VCE0 VCER VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 45 45 45 Values BCP 52 60 60 60 5 1 1.5 100 200 1.5 150 BCP 53 80 100 100 Unit V A mA W ˚C
  – 65 … + 150 72 17 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BCP 51 ... BCP 53 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BCP 51 BCP 52 BCP 53 Collector-base breakdown voltage IC = 100 µA, IB = 0 BCP 51 BCP 52 BCP 53 Emitter-base.