Q62702-C1891 PNP Silicon AF Transistors (For AF input stages and driver applications High current gain)

Q62702-C1891 PNP Silicon AF Transistors (For AF input stages and driver applications High current gain)

PNP Silicon AF Transistors BCW 61 BCX 71 q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW 60, BCX 70 (NPN) Type BCW 61 A BCW 61 B BCW 61 C BCW 61 D BCW 61 FF BCW 61 FN BCX .

Features

h JA Rth JS ≤ ≤ Symbol BCW 61 VCE0 VCB0 VEB0 IC ICM IBM Ptot Tj Tstg 32 32 Values BCW 61 FF BCX 71 32 32 5 100 200 200 330 150
  – 65 … + 150 45 45 Unit V mA mW ˚C 310 240 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BCW 61 BCX 71 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCW 61, BCW 61 FF BCX 71 Collector-base breakdown voltage IC = 10 µA BCW 61, BCW 61 FF BCX 71 Emitter-base breakdown voltage IE = 1 µA Collector cutoff cu.