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Q62702-C1690
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Q62702-C1690 NPN Silicon AF Transistors

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Q62702-C1690 NPN Silicon AF Transistors

NPN Silicon AF Transistors BC 817 BC 818 q q q q q For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 807, BC 808 (PNP) Type BC 817-16 BC 817-25 BC 817-40 BC 818-16 BC 818-25 BC 818-40 Marking 6As 6Bs 6Cs 6Es 6Fs.

Features

l power dissipation, TC = 79 ˚C Ptot 285 215 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BC 817 BC 818 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 817 BC 818 Collector-base breakdown voltage IC = 100 µA BC 817 BC 818 Emitter-base breakdown voltage, IE = 10 µA Collector cutoff current VCB = 25 V VCB = 25 V, TA = 150 ˚C Emitter cutoff current, VEB = 4 V DC current gain1) IC = 100 mA; VCE = 1 V BC 817-16, BC 818-16 BC 817-25, B.

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