Q62702-C1480 PNP Silicon AF Transistors (For general AF applications High current gain)

Q62702-C1480 PNP Silicon AF Transistors (For general AF applications High current gain)

PNP Silicon AF Transistors BCW 67 BCW 68 For general AF applications q High current gain q Low collector-emitter saturation voltage q Complementary types: BCW 65, BCW 66 (NPN) q Type BCW 67 A BCW 67 B BCW 67 C BCW 68 F BCW 68 G BCW 68 H Marking DAs DBs DCs DFs DGs DHs Ordering Code (tape and re.

Features

t V mA A mA mW ˚C 285 215 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BCW 67 BCW 68 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCW 67 BCW 68 Collector-base breakdown voltage IC = 10 µA BCW 67 BCW 68 Emitter-base breakdown voltage, IE = 10 µA Collector cutoff current VCB = 32 V VCB = 45 V VCB = 32 V, TA = 150 ˚C VCB = 45 V, TA = 150 ˚C BCW 67 BCW 68 BCW 67 BCW 68 IEB0 hFE 35 50 80 75 120 180 100 160 250 35 60 100
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