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Q62702-C1475
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Q62702-C1475 PNP Silicon Darlington Transistors (For general AF applications High collector current)

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Q62702-C1475 PNP Silicon Darlington Transistors (For general AF applications High collector current)

PNP Silicon Darlington Transistors BCV 26 BCV 46 For general AF applications q High collector current q High current gain q Complementary types: BCV 27, BCV 47 (NPN) q Type BCV 26 BCV 46 Marking FDs FEs Ordering Code (tape and reel) Q62702-C1493 Q62702-C1475 Pin Configuration 1 2 3 B E C Pack.

Features

stics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCV 26 BCV 46 Collector-base breakdown voltage IC = 100 µA BCV 26 BCV 46 Emitter-base breakdown voltage, IE = 10 µA Collector cutoff current VCB = 30 V VCB = 60 V VCB = 30 V, TA = 150 ˚C VCB = 60 V, TA = 150 ˚C Emitter cutoff current, VEB = 4 V DC current gain1) IC = 100 µA, VCE = 1 V IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V IC = 0.5 A, VCE = 5 V BCV 26 BCV 46 BCV 26 BCV 46 BCV 26 BCV 46 BCV 26 BCV 46 VCEsat VBEsat BCV 26 BCV 46 BCV 26 BCV 46 IEB0 hFE 400.

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