Q62702-A917 Siemens Semiconductor Group Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode)

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Q62702-A917

Siemens Semiconductor Group
Q62702-A917
Q62702-A917 Q62702-A917
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Part Number Q62702-A917
Manufacturer Siemens Semiconductor Group
Description Silicon Switching Diodes BAS 79 A … BAS 79 D Switching applications q High breakdown voltage q Common cathode q Type BAS 79 A BAS 79 B BAS 79 C BAS 79 D Marking BAS 79 A BAS 79 B BAS 79 C BAS 79 D...
Features TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) = 100 µA V(BR) BAS 79 A BAS 79 B BAS 79 C BAS 79 D VF
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  – IR
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  – 1 50
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  – 1.6 2 µA Values typ. max. Unit V 50 100 200 400
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  – Forward voltage1) IF = 1 A IF = 2 A Reverse current VR = VR max VR = VR max, TA = 150 ˚C AC characteristics Diode capacitance VR = 0, f = 1 MHz Reverse recovery time IF = 200 mA, IR = 200 mA, RL = 100 Ω measured at IR = 20 mA Test circuit for reverse recovery time CD trr
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  – 10 1
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  – pF µs Pulse generator: tp = 5 µs, D = 0.05 tr = 0.6 ns, R...

Datasheet Datasheet Q62702-A917 Data Sheet
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