Q62702-A1161 Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring)

Q62702-A1161 Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring)

BAT 64...W Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage 3 2 1 VSO05561 BAT 64W BAT 64-04W BAT 64-05W BAT 64-06W ESD: Electrostatic discharge sensitive device, observe ha.

Features

Tstg Semiconductor Group Semiconductor Group 11 Sep-07-1998 1998-11-01 BAT 64...W Thermal Resistance Junction - ambient 1) BAT 64W Junction - ambient 1) BAT 64-04/06W Junction - ambient 1) BAT 64-05W Junction - soldering point BAT 64W Junction - soldering point BAT 64-04/06W Junction - soldering point BAT 64-05W RthJA RthJA RthJA RthJS RthJS RthJS ≤255 ≤290 ≤455 ≤120 ≤155 ≤185 K/W 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. max..