Q62702-A1050 Silicon Switching Diode

Q62702-A1050 Silicon Switching Diode

BAS 16W Silicon Switching Diode • For high speed switching applications Type BAS 16W Marking Ordering Code A6s Q62702-A1050 Pin Configuration 1=A 3=C Package SOT-323 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total Power .

Features

A = 150 °C VR = 75 V, TA = 150 °C AC characteristics Diode capacitance CD 2 pF ns 6 VR = 0 V, f = 20 MHz Reverse recovery time trr IF = 10 mA, IR = 10 mA, RL = 100 Ω trr measured at 1 mA Semiconductor Group 2 Nov-28-1996 BAS 16W Forward current IF = f (TA*;TS) * Package mounted on epoxy Forward current IF = f (VF) TA = 25°C 300 mA IF TA 200 TS 150 100 50 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RthJS = f(tp) Permissible Pulse Load IFmax/IFDC = f(tp) 10 3 10 2 K/W RthJS 10 2 IFmax/IFDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.0.