Q62702-A1010 Siemens Semiconductor Group Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) Datasheet. Stock, Price

logo

Search by part number and manufacturer or description

Q62702-A1010

Siemens Semiconductor Group
Q62702-A1010
Q62702-A1010 Q62702-A1010
zoom Click to view a larger image
Part Number Q62702-A1010
Manufacturer Siemens Semiconductor Group
Description BAR 64... Silicon PIN Diode l High voltage current controlled l RF resistor for RF attenuator and swirches l Freqency range above 1 MHz l Low resistance and short carrier lifetime l For frequencies ...
Features Edition A01, 23.02.95 BAR 64... Electrical characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol min. Value typ. max. Unit DC characteristics per diode Breakdown voltage IR = 5 µA Forward voltage IF = 50 mA Diode capacitance VR = 20 V, f = 1 MHz Forward resistance IF = 1 mA, f = 100 MHz IF = 10 mA, f = 100 MHz IF = 100 mA, f = 100 MHz Charge carrier lifetime IF = 10 mA, IR = 6 mA, IR = 3 mA Series inductance V(BR) 200 0.23 12.5 2.1 0.85 1.55 1.4 - V V 1.1 pF 0.35 Ω -20 3.8 1.35 µs nH VF CT rf τL Ls Forward current rF= f (TS;TA*) BAR64 * mounted on alumina F...

Document Datasheet Q62702-A1010 Data Sheet
PDF 89.49KB


Distributor Stock Price Buy




Similar Datasheet

No. Part # Manufacture Description Datasheet
1
Q62702-A1017

Siemens Semiconductor Group
Silicon Dual Schottky Diode (High barrier diode for balanced mixers/ phase detectors and modulators)
Datasheet
2
Q62702-A1004

Siemens Semiconductor Group
Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies)
Datasheet
3
Q62702-A1006

Siemens Semiconductor Group
Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers/ phase detectors and modulators)
Datasheet
4
Q62702-A1025

Siemens Semiconductor Group
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
Datasheet
5
Q62702-A1028

Siemens Semiconductor Group
Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies)
Datasheet
6
Q62702-A1028

Siemens Semiconductor Group
Silicon Schottky Diode (Low Barrier diode for detectors up to GHz frequencies)
Datasheet
7
Q62702-A1030

Siemens Semiconductor Group
Silicon Switching Diode Array (For high speed switching applications Common cathode)
Datasheet
8
Q62702-A1031

Siemens Semiconductor Group
Silicon Switching Diode Array (For high speed switching applications Common anode)
Datasheet
9
Q62702-A1036

Siemens Semiconductor Group
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
Datasheet
10
Q62702-A1037

Siemens Semiconductor Group
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
Datasheet
More datasheet from Siemens Semiconductor Group



Since 2014 :: D4U Semiconductor :: (Privacy Policy & Contact)