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PTF210901E |
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| Part Number | PTF210901E |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Description | The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Two–Carrier WC... |
| Features |
• • Internal matching for wideband performance Typical two –carrier 3GPP WCDMA performance - Average output power = 19 W at –37 dBc - Efficiency = 25% Typical CW performance - Output power at P –1dB = 105 W - Gain = 15 dB - Efficiency = 53% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR at 28 V, 90 W (CW) output power • -30 Efficiency (%), Gain (dB) IMD (dBc), ACPR (dBc) • • • Output Power, Avg. (dBm) PTF210901E Package 30248 ESD: Electrostatic discharge sensitive device — observe handling precaution... |
| Document |
 PTF210901E Data Sheet
PDF 266.35KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Infineon Technologies AG |
LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz |
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Infineon Technologies AG |
LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz |
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Infineon Technologies AG |
LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz |
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Infineon Technologies AG |
LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz |
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Infineon Technologies AG |
LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz |
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Infineon Technologies AG |
LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz |
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Infineon Technologies AG |
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz |
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Infineon Technologies AG |
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz |
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Infineon Technologies AG |
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz |
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Infineon Technologies AG |
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz |
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