PTF10195 |
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| Part Number | PTF10195 |
| Manufacturer | Ericsson |
| Description | The 10195 is an internally matched 125–watt GOLDMOS FET intended for cellular, GSM, D-AMPS, CDMA and EDGE applications. This device operates at 53% efficiency with 13 dB of gain minimum. Full gold met... |
| Features |
= 1300 mA, f = 894 MHz) Drain Efficiency (VDD = 28 V, POUT = 125 W, IDQ = 1300 mA, f = 894 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 125 W, IDQ = 1300 mA, f = 894 MHz —all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated.
Symbol
Gpe P-1dB h Y
Min
13 125 45 10:1
Typ
14 140 53 —
Max
— — — —
Units
dB Watts % —
e
1
PTF 10195
Electrical Characteristics
Characteristic
(100% Tested)
e
Conditions Symbol
V(BR)DSS IDSS VGS(th) gfs
Min
65 — 3.0 —
Typ
— — — 3.0
Max
— 1.0 5.0 —
Units
Volts mA Volts Siemens
Drain-Source Breakdown Voltage V... |
| Document |
 PTF10195 Data Sheet
PDF 328.96KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Ericsson |
12 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor |
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Ericsson |
165 Watts/ 860-900 MHz LDMOS Field Effect Transistor |
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Ericsson |
5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor |
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Ericsson |
6 Watts/ 1.5 GHz GOLDMOS Field Effect Transistor |
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Ericsson |
60 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor |
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Ericsson |
12 Watts/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
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Ericsson |
120 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor |
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Ericsson |
50 Watts WCDMA/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
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Ericsson |
135 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor |
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Ericsson |
85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor |
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