PTF10052 Datasheet

PTF10052 35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor

The PTF 10052 is a 35 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Performance at 960 MHz, 28 Volts - Output P.

Features

t at 1 dB Compression (VDD = 28 V, IDQ = 300 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, POUT = 35 W, IDQ = 300 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 35 W, IDQ = 300 mA, f = 960 MHz— all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated. Symbol Gps P-1dB h Y Min 12.0 35 50 — Typ 13.5 — 55 — Max — — — 10:1 Units dB Watts % — e 1 PTF 10052 Electrical Characteristics Characteristic (100% Tested) e Conditions Symbol V(BR)DSS IDSS VGS(th) gfs Min 65 — 3.0 — Typ 70 — — 2.8 Max — 1.0 5.0 — Units Volts mA Volts Siemen.