PTB20171 25 Watts/ 935-960 MHz Cellular Radio RF Power Transistor

PTB20171 25 Watts/ 935-960 MHz Cellular Radio RF Power Transistor

The 20171 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 25 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excelle.

Features

θJC Symbol VCER VCBO VEBO IC PD Value 50 50 4.0 5.0 145 0.833
  –40 to +150 1.2 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 1 9/28/98 PTB 20171 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 10 mA, RBE = 22 Ω VBE = 0 V, IC = 10 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1 A Symbol V(BR)CER V(BR)CES V(BR)EBO hFE Min 50 55 4 20 Typ 50 60 5 40 Max — — — — Units Volts Volts Volts — RF Specifications (100% Tested) Characteristic Gain (VCC = 24 Vdc, Pout = 25 W, ICQ = 150.