PTB20003 4 Watts/ 915-960 MHz Cellular Radio RF Power Transistor

PTB20003 4 Watts/ 915-960 MHz Cellular Radio RF Power Transistor

The 20003 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 4 Watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are us.

Features

°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RθJC Symbol VCER VCBO VEBO IC PD Value 40 50 4.0 1.7 35 0.2
  –40 to +150 5.0 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 1 9/28/98 PTB 20003 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 50 mA VBE = 0 V, IC = 50 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 250 mA Symbol V(BR)CEO V(BR)CES V(BR)EBO hFE Min 25 55 4 20 Typ 30 70 5 50 Max — — — 120 Units Volts Volts Volts — RF Spec.